sapphire substrate的意思

sapphire substrate中文翻譯：

[電子]藍寶石襯底

相似詞語短語

father substitute───替代父親

sentence substitute───替代句

turpentine substitute───松節油替代品

father substitutes───父親替代品

latirostrate───緯度

perlustrate───仔細巡視；徹底調查

sapphires───[寶]藍寶石

sentence substitutes───句子代用品

sequestrate───v.扣押，強制管理（債務人資產）；沒收；宣布……破產

雙語使用場景

a 2D pattern was ablated onto the sapphire substrate by scanning approach.───掃描刻蝕法在藍寶石基片上加工了一個二維圖形。

The invention belongs to the field of ultra-precision processing of hard and brittle crystal materials and relates to a corroding agent for detecting damage of a surface layer of a sapphire substrate.───本發明屬于硬脆晶體材料超精密加工領域，涉及一種用于檢測藍寶石基片表面層損傷的腐蝕劑。

For this application, the best choice is to use a sapphire substrate and copper electrodes to mount the sample, as shown in Figure 2.───對于這種應用，最好的選擇是使用藍寶石基底和銅電極來安裝樣本，如圖2所示。

Indeed we have had successfully remove sapphire substrate by mechanical lift-off to develop the large area lift-off by HIP structure.───實際上，我們亦已大面積地利用該結構以機械式剝離法剝離藍寶石基板。

Growth and Stress Analysis of a-Plane GaN Films Grown on r-Plane Sapphire Substrate with a Two-Step AlN Buffer Layer───r面藍寶石襯底上采用兩步AlN緩沖層法外延生長a面GaN薄膜及應力研究

Study of ECR-plasma Cleaning and Nitridation of Sapphire Substrate Using RHEED───藍寶石襯底分步清洗及其對后續氮化的影響

Structural and Optical Properties Characterization of GaN Film Deposited on Sapphire Substrate───薄膜的結構和光學特性表征

Instantaneous relaxation of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE───藍寶石鄰晶面襯底MBE生長GaN薄膜的瞬態光電導弛豫特性研究

英語使用場景

Indeed we have had successfully remove sapphire substrate by mechanical lift-off to develop the large area lift-off by HIP structure.

The invention belongs to the field of ultra-precision processing of hard and brittle crystal materials and relates to a corroding agent for detecting damage of a surface layer of a sapphire substrate.

And then, a 2D pattern was ablated onto the sapphire substrate by scanning approach.

This dissertation investigates the growth and characteristics of Zn-doped Indium nitride alloys on (0001) Sapphire substrate by RF reactive magnetron sputtering.

The main reason for the formation of different polar direction is the inhomogeneous nitridation of sapphire substrate which has both N-polarity and Al-polarity.

UltraCMOS mixed-signal process technology is a proprietary, patented variation of silicon-on insulator (SOI) technology on a sapphire substrate providing high yields and competitive costs.