electron beam lithography的意思
electron beam lithography中文翻譯:
[電子]電子束曝光;[電子]電子束蝕刻
electron beam───[物]電子束
lithography───n.[印刷]平版印刷術,石印術
electron───n.電子
beam───n.橫梁;光線;電波;船寬;[計量]秤桿;vt.發送;以梁支撐;用…照射;流露;n.(Beam)人名;(阿拉伯)貝亞姆;(英)比姆;vi.照射;堆滿笑容
lithography cis───光刻cis
lithography solutions───光刻解決方案
outermost electron───最外層電子
lithography cof───平版印刷
electron shell───[物]電子殼層;[物]電子殼;[物]電子層
electron beam lithography and its improvement are introduced also.───同時還介紹了電子束光刻技術及其改進。
Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.───將付里葉變換法運用于電子束曝光的鄰近效應校正中,形成了快速、準確的劑量校正法。
Electron beam lithography machine is the key instrument for mask making and research of nanometer device.───電子束曝光技術是掩模版制作和納米器件研究的主要手段。
Electron beam lithography technique has developed in recent thirty years. It has been used in many fields such as micro fabrication.───電子束曝光技術是近三十年來發展起來的一門新興技術,目前廣泛應用于微細加工等各種領域。
A conic primitive based intermediate pattern and its data format of electron beam lithography are defined.───在一種新的電子束曝光機二次曲線單元圖的基礎上定義了一種中間圖形數據格式。
Inductors were defined by electron-beam lithography and formed by depositing micron-thick aluminium metal onto the wafers.───用電子束刻蝕法在晶片上鍍上納米級鋁層形成了電感器。
Approaching higher resolution is the critical issue for electron-beam lithography.───追求更高的分辨率是電子束曝光研究的核心內容。
This paper introduced the develop level of electron beam lithography in the world and the techniques used in pattern generators.───論文首先簡要介紹了國內外電子束曝光技術的發展水平和圖形發生器的工作原理。
There are two major topics in my research. One is the research of electron-beam lithography proximity effect correction.───在本篇論文有兩個主題,一個是電子術微影鄰近效應的修正,另一個抗反射層的制備。
The residual surface potential may introduce errors in following observations, affect measurement accuracy in critical dimension SEM and cause pattern placement errors in electron beam lithography.
This paper introduces the development of electron beam lithography around the world and basic fundamentals of pattern generator.
A novel process combining the self-assembly technique with electron beam lithography and selective chemical deposition was proposed for patterned film preparation.
The deflection system of an electron beam lithography tool is used to control deflection scanning of electron beam.
The device is fabricated in Gallium Arsenide using electron beam lithography to define special side-gated channels.
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