青年中文青年中文

electron scattering的意思

electron scattering中文翻譯:

電子散射

相似詞語短語

scattering───v.散射;散布;驅散(scatter的ing形式);n.散射;分散;adj.分散的

electron───n.電子

scattering stars───散落的星星

scattering time───散射時間

scattering medium───散射介質

scattering effect───散射效應;[物]離散作用

outermost electron───最外層電子

electron shell───[物]電子殼層;[物]電子殼;[物]電子層

visa electron───visa electron卡

雙語使用場景

Spin correlated elastic and inelastic electron scattering processes are briefly described.───簡述了與自旋相關的電子的彈性散射和非彈性散射過程;

The first was to use a thinner resist layer, to minimize electron scattering.───第一項是使用更薄的光阻膠涂層以減小電子的散射。

The external electric field have significant influence on electron scattering rates between the high energy levels.───外加電場對低能級電子散射速率的影響較小,對高能級電子的散射速率影響相對較大。

The phosphor plate is exposed under electron scattering conditions in the microscope chamber.───熒光體板暴露條件下的電子散射的顯微鏡廳。

Device for measuring the total cross-section for intermediate and high energy electron scattering───中高能電子的散射全截面測量裝置

Absolute differential, elastic integral and moment transfer cross sections for electron scattering by SO at intermediate and high energies───中、高能電子被SO分子散射的微分截面、動量轉移截面及彈性積分截面

The semiempirical formula of electron scattering from poly-atomic molecules for total cross sections at intermediate and high energy───計算中高能區電子與多原子分子散射總截面的經驗公式

A modification potential method for total cross section calculation of electron scattering by molecules at medium and high energies───一種計算中、高能電子被分子散射總截面的修正勢方法

英語使用場景

To avoid complex computation in Monte Carlo simulation for electron scattering in solid, a new matrix equation to describe the process is presented.

According to the electron-phonon coupling model, the electron scattering probability is not only proportional to the phonon number, bud also proportional to the electron-phonon coupling strength.

Similarly, electron scattering produces electrons that travel away from the sun, whereas the Cerenkov light from deuteron breakup can point in any direction.

Thus, a thin-film semiconductor device operating with high mobility without being adversely influenced by, for example, electron scattering at the grain boundaries during the operation.