floating gate的意思

floating gate中文翻譯：

浮置閘門，浮置柵極

相似詞語短語

floating───v.漂浮（float的現在分詞）；adj.流動的；漂浮的，浮動的

gate───vt.給…裝大門；n.(Gate)人名；(英)蓋特；(法、瑞典)加特；n.大門；出入口；門道

floating shelves───浮動貨架

floating restaurants───浮動餐廳

floating point───浮點，浮點法，浮點小數點；[計]浮點

floating text───浮動文本

floating life───漂浮生命

floating koala───漂浮的考拉

gate chalk───門粉筆

雙語使用場景

According to the structural feature of the floating gate, a nonlinear single - degree of harmonic oscillating model is set up.───根據浮體閘門的構造特征，建立了單自由度非線性振蕩模型。

The floating gate can only be accessed though another transistor, the control gate.───浮動門雖然只能進入另一個晶體管，控制閘門。

The floating gate is positioned between the source and drain regions.───浮動柵極定位于源極區與漏極區之間。

The DRAM further has a floating gate insulated from the surface and is positioned between the first region and the second region.───所述DRAM進一步包括與所述表面絕緣的浮柵，且位于所述第一區域和所述第二區域之間。

Each bit of data in a flash memory device is stored in a transistor called a floating gate.───每一個比特的數據儲存在快閃記憶裝置稱為浮柵晶體管。

A second impurity diffusion layer, which occupies a space within the semiconductor substrate, overlaps with the floating gate.───第二雜質擴散層設置在半導體基板內，并與浮柵重疊。

The process the control gate uses to access the floating gate is a field emission phenomenon known as Fowler-Nordheim tunneling.───利用過程控制閘門進入浮柵是場發射現象稱為Fowler-Nordheim隧。

The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.───本發明同時公開了一種多介質復合遂穿層的納米晶浮柵存儲器的制作方法。

英語使用場景

At first, the thesis has studied floating gate performance of a kind of new flash structure which combines split gate structure and stack gate structure.

Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.

A memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack.

Based on the PMOS Quasi - floating gate transistors, a fully differential operational amplifier is proposed.