青年中文gate electrode的意思
gate electrode中文翻譯：
[電子]柵電極
electrode───n.[電]電極；電焊條
gate───vt.給…裝大門；n.(Gate)人名；(英)蓋特；(法、瑞典)加特；n.大門；出入口；門道
electrode pokemon───電極口袋妖怪
electrode pokedex───電極pokedex
electrode copper───電極銅
porous electrode───多孔電極，多孔性電極
graphite electrode───[電]石墨電極
electrode stats───電極狀態
electrode tool───電極工具
region and a drain region are formed in the fin at the opposite sides of the gate electrode.───源區和漏區形成在鰭部內柵極的相對側處。
protection circuit on the input end has a gate electrode comprised of a band-like conductive film.───輸入端的保護電路有由帶狀導電膜組成的柵電極。
gate electrode is formed on the gate insulating film and has a sidewall.───柵極電極在柵極絕緣膜上形成，并具有側壁。
A first conductive impurity ion is implanted into a semiconductor substrate to form a well area on which a gate electrode is formed.───向半導體襯底中注入第一導電雜質離子，由此形成阱區，其上再形成柵極。
Most of the radiation is not energetic enough to penetrate the gate electrode, so damage is confined to the periphery of that electrode.───大多數輻射沒有足夠的能量來穿透柵電極，因此，損傷被限制在電極的周圍。
The one gate insulating layer may be interposed between the common gate electrode and the one pair of fins of the semiconductor substrate.───柵極絕緣層置于所述公共柵極電極和所述半導體襯底的所述鰭對之間。
So the name of a process became identified with the width of the gate electrode.───所以，制程的名字就用來標識閘電極的寬度。
A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode.───置于所述至少一個導電保護電極之上但是與所述導電保護電極隔離開的柵極；
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.───源區和漏區形成在鰭部內柵極的相對側處。
A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode.
A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively.
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
The common gate electrode may enclose a portion of one fin of the one pair of fins of the semiconductor substrate, and may be insulated from the semiconductor substrate.
The gate electrode is formed on the gate insulating film and has a sidewall .
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.http://Sentencedict.com
By the side wall type gate electrode flash memory unit structure with the shared word line, the invention realizes the two-position storage, thereby improving the storage density.
Using the high-quality mica plate as substrate materials, a new gate electrode structure was fabricated successfully with silver slurry and simple screen-printing process.