青年中文device structure的意思
device structure中文翻譯：
設備結構
器件結構
device───n.裝置；策略；圖案；設備；終端
structure───vt.組織；構成；建造；n.結構；構造；建筑物
device control───[計]設備控制；設備控制符，裝置控制
tech device───技術設備
leveling device───水平調節裝置；液面控制裝置；水平調整裝置
device status───[計]設備狀態
safety device───[安全]安全裝置；保護裝置；[安全]保險裝置；[安全]安全防護裝置；過載安全裝置
eikon device───eikon設備
actuator device───執行機構裝置
Card buckle type water distribution device structure.───卡扣式布水器結構，布水均勻。
In this dissertation, main study is on device structure, performance and luminescence mechanism etc.───本文主要側重于研究器件結構、特性及發光機理等方面。
Some new design considerations on device structure are proposed.───提出了在器件結構上的一些新設想。
Through the analysis of this waveguide mode, single-mode ridge waveguide was designed and a new device structure was proposed.───通過對這種波導模式的分析，進行了單模脊波導的設計，提出了一種新器件結構。
Each sk_buff identifies the device structure (net_device) to which the packet is being sent or from which the packet was received.───每個sk_buff都在設備結構（net_device）中標識報文發送的目的地，或者接收報文的來源地。
At initialization time, a device driver allocates a net_device structure and then initializes it with its necessary routines.───在進行初始化時，設備驅動程序會分配一個net_device結構，然后使用必須的程序對其進行初始化。
The results of the qualitative change depends on just the starting point of oscillating and inking device structure.───這些改變定性的結果僅僅取決于串墨起始角度以及供墨裝置的結構。
A light emissive device structure and a method for forming a light emissive device structure are provided.───提供一種光線發射器件結構和一種用來形成光線發射器件結構的方法。
A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described.───設計了一種新的用于離線式集成開關電源啟動電路的自偏置高壓器件結構。
Basic principles of device modeling and simulation were introduced and by using process simulating software basic device structure were implemented, device characteristics were analyzed in succession.
The device structure is simple, small footprint, easy to use and reliable.
A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described.
In addition, we designed the new device structure, the new layout and the new flow of the Static Induction Transistor (SIT).
A novel - bias - voltage device structure for the - up circuit of an - line switching model power supply IC is described.
The effects of DBR reflectivity and well numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure.
With the aid of this type of device structure improvements, Graphene FET are higher switches.
The mechanical driving is composed of three major parts of a winding up structure, an energy storing device structure and a braking on-off control structure.
Through the analysis of this waveguide mode, single-mode ridge waveguide was designed and a new device structure was proposed.