heterostructure的意思

heterostructure中文翻譯：

n.[電子]異質結構

相似詞語短語

Heterosomata───n.異體目；鰈形目

heterostylism───n.異長花柱現象；異形花柱性

heterosis───n.[遺]雜種優勢

heterosporic───adj.異形孢子的

heterosporous───具異形孢子的

heterostyled───異性戀

雙語使用場景

Heterostructure is the most essential and important structure of semiconductor lasers.───異質結構是半導體激光器最基本也是最重要的結構。

valley mixing in band mixing quantum well and the heterostructure intervalley transferred electron effect are described in this paper.───介紹了能帶混合量子阱中的多能谷混合和異質谷間轉移電子效應。

The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.───共振隧穿二極管因其特有的負微分電阻特性，成為一種很有前途的基于能帶工程的異質結構量子器件。

A new model of two dimensional surface states produced by a strong polarized charge on a nitride heterostructure surface is presented.───提出了氮化物表面強極化電荷產生薄吸附層形成的二維表面態新模型。

The heterostructure intervalley transferred electron effect and its devices have been thoroughly analyzed through this work.───從而深化了對異質谷間轉移電子器件及其工作機理的研究。

Laser Diodes (contd. ) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting.───平面鐳射：雙異質結構，量子井，多重電極，面發射。

Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.───研制這種分布反饋雙異質結構激光器要求在皺折層上生長出單晶層。

Diagram of front view of a double heterostructure laser diode (not to scale).───一個雙異質結激光器的前視圖（非等比例）。

Semiconductor heterostructure and its application on electronics and optoelectronics: profile of the 2000 Nobel Prize in physics───半導體異質結及其在電子和光電子中的應用——2000年諾貝爾物理獎評述

英語使用場景

Double heterostructure(DH)realizes the complete confinement of carriers and light, decreasing threshold current density substantially.

From this new physical principle, we have developed a new heterostructure intervalley transferred electron device (HITED).

Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.

A second embodiment of the inventive method for forming a semiconductor heterostructure comprises steps S1 to S3 and S5 of the first embodiment.

The polaron ground state in asymmetric double heterostructure (ADHS) is studied.

Separate confinement heterostructure strained single quantum well materials were grown by the technology of metal organic chemical vapor deposition(MOCVD).

The energy band tailoring in AlGaN/GaN heterostructure by using polarization charge is investigated according to the self consistent solution of Schr dinger equation and Poisson equation.

The main factors affecting the quality of semiconductor heterostructure epitaxy chips, inspection methods and some typical test results have beeen introduced in this pater.

The introduce of band-gap discontinuity in heterostructure can obtain high injection ratio, decrease further threshold current and increase the output power.