青年中文青年中文

impact ionization的意思

impact ionization中文翻譯:

[物]碰撞電離

相似詞語短語

impact───vi.影響;撞擊;沖突;壓緊(on,upon,with);vt.擠入,壓緊;撞擊;對…產生影響;n.影響;效果;碰撞;沖擊力

penning ionization───潘寧電離;彭寧電離

profound impact───深遠影響

impact book───影響書

asteroid impact───小行星撞擊

impact drill───沖擊式鉆機,沖擊鉆

economic impact───[經]經濟影響

visual impact───視覺沖擊,視覺震撼;視覺效果

impact wrestling───沖擊式摔跤

雙語使用場景

Based on photoemission effect. we design a laser photoemission electron gun for electron impact ionization source of time of flight mass spectrometer.───基于光電效應原理。我們設計了一個新型脈沖激光光電子槍,它可以作為飛行時間質譜的電子碰撞電離的電離源。

is unfavorable to study MS of aminoglycosides using electron impact ionization.───使用電子轟擊離子化方法研究氨基糖甙類是不理想的。

Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).───碰撞電離通過一在一浮柵電荷存儲晶體管(11)的襯底(20)中限定一虛擬二極管(30)的電荷注入器(25)而產生。

A non-volatile memory cell operating at low voltage by means of impact ionization for programming.───一種可于低壓工作的非易失性存儲單元,其通過碰撞電離進行編程。

The severe impact ionization effects in polycrystalline silicon thin-film transistors are investigated and characterized.───為了研究與分析復晶矽薄膜電晶體下嚴重的碰撞游離效應所造成的元件特性。

In this thesis, we analyse the impact-ionization mechanism and build up 1D and 2D impact-ionization circuit model.───本論文主要以分析撞擊游離(impact-ionization)的機制并建立一維及二維的撞擊游離等效電路模型。

Collisional ionization rate coefficients of electron impact ionization in a highly ionized Au plasma───激光金等離子體的電子離子碰撞電離速率系數

A Fully Relativistic Distorted-wave Calculation for Electron-impact Ionization Cross Section───電子碰撞電離截面的全相對論扭曲波計算

Low-energy triple-differential cross sections for electron impact ionization of hydrogen───低能電子離化氫原子的三重微分截面

英語使用場景

Based on photoemission effect. we design a laser photoemission electron gun for electron impact ionization source of time of flight mass spectrometer.

Gate current for pMOSFETs is composed of direct tunneling current, channel hot hole, electron injection current, and highly energetic hot holes by secondary impact ionization.

A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.

Hot carriers refer to the carriers that have gained high kinetic energy after being accelerated by a strong electric field in areas of high field or by impact ionization.