青年中文rie的意思
rie中文翻譯：
n.（Rie）人名；（英）里
abbr.反應離子刻蝕（ReactiveIonEtching）
m rie───m ris公司
Salope ch rie───婊子
Rie hair with warm water.───溫水沖洗發片。
He gave it to Lucie Rie (1902-95), who on her death bequeathed it to Janet Leach.───他把它給了露西惠(1902年至95年)，誰死在她的遺贈給珍妮·特利奇。
I rie my hair.───我洗濯頭發。
So I did not know of Mor rie's illness.───因此我毫不知曉莫里得病的情況。
The coercivity was reduced 33% using a 2 minutes RIE process, which had a negligible effect on the MR.───通過2分鐘的RIE使矯頑力減小33%，而磁電阻率幾乎不受影響。
Furthermore, some data authentication and digital signature schemes can be constructed directly from RIE.───進一步，可以利用RIE直接構造各種數據鑒別和數字簽名方案。
DOE's fabrication techniques mainly include laser beam or electron beam writing, RIE , ion milling and thin film deposition.───衍射光學元件的制作技術主要包括激光或電子束直寫、反應離子刻蝕、離子束銑及薄膜沉積。
The reactor is capable of working in the RIE mode and also in the plasma etching mode.───反應腔擁有在RIE模式和等離子刻蝕模式下工作的能力。
It is the intention of the LME to seek RIE authorisation for the new joint venture.───這是倫敦金屬交易所有意謀求刻蝕授權的新的聯合合資企業。
Its 300-mm Primo D-RIE system leverages a twin-station, mini-batch cluster architecture with a single-wafer environment and a VHF de-coupled RIE plasma source.
We report process of Si quantum wire and dot based on EBL and RIE processes and process of nano structure metal gate based on EBL, electron beam evaporation and lift off techniques.
The gated silicon field emitter arrays(FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching(IBE) and reactive ion etching(RIE).
The coercivity was reduced by 33% using a 2 minutes RIE process, which had a negligible effect on the MR.
The second barrier layer (107) is removed from the exposed field areas by a low bias power RIE.
The effects of gas flow rate, chamber pressure, and rf(radio frequency)plasma power on the etch rate were investigated and the surface contamination due to RIE was examined.
A two-dimensional (2D) physical model of reactive ion etching (RIE) which includes isotropic and anisotropic components is presented. The physical model is analyzed.