n type的意思

n type中文翻譯：

n型

相似詞語短語

type───vi.打字；vt.打字；測定（血等）類型；n.類型，品種；模范；樣式；n.(Type)人名；(英)泰普

N n───abbr.neuralnetwork神經網絡；NetworkNode網絡結點

type in───打入，輸入；在已打好的材料上加入; 輸入（在網上）

script type───腳本類型

jesting type───玩笑式

Batt Type───電池類型

dimm type───霧型

wrong type───錯誤類型

aestivation type───夏眠型

雙語使用場景

This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.───加速度計用普通的N型硅片制造，為了刻蝕高深寬比的結構，使用了深反應離子刻蝕（DRIE）工藝。

Gallium nitride turned out to be difficult to grow without defects, and although n-type gallium nitride could be made easily, p-type could not.───氮化鎵最終被發現很難做到沒有瑕疵，即使n型氮化鎵很容易被造出，p型卻不然。

Thermal electricity type is simple N type with large thermal electricity ratio absolute value.───方鉛礦的熱電導型單一，均為N（電子）型，并且具有較大的熱電系數絕對值。

In this case, as the P-type and N-type materials, any material generally preferably used for thermoelectric pairs can be used.───在這種情況下，作為P型和N型材料，可以使用通常優選地用于熱電偶的任何材料。

The main reason for the strength increase was the full - alignment of web - shells in N-type concrete masonry prisms.───分析表明，其強度提高的主要原因是N式砌塊砌體實現了孔、肋對齊。

When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.───使一塊金屬與n型半導體接觸時，電子將從半導體流到金屬。

In electronics, an interface between a P -type and N-type semiconductor material ; such an interface produces a diode effect.───在電子技術中，一種p型和N型半導體材料之間的界面，這種界面可以產生二極管效應。

In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.───在p型和n型半導體材料之間渡越區中的一個面，在這里施主雜質和受主雜質的濃度相等。

These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.───這些n型攙雜濃度能使用中子嬗變攙雜（NTD）技術來取得。

英語使用場景

And draws a conclusion that doped N type monocrystal silicon is quite fit for micro EDM, while a non doped one isn't by a lot of EDM experiments.

As the P concentration increases to a suitable quantity, the photoconductivity of the alloy en-hances 2-3 orders of magnitude and the conduction mechanism changes from P to N type.

The active layer is made on high N type doping layer, and has a less area than ohmic contact layer.

N type showed high assertiveness, imaginativeness and sense of independence while S type showed a capacity to succeed in new environment.

This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.