青年中文silicide的意思
silicide中文翻譯：
n.[無化]硅化物
basiliscus wikipedia───維基百科
siliceous rocks───硅質巖類
silicate symbol───硅酸鹽符號
deodorize silicone───硅酮除臭
silicates contains what───硅酸鹽含有什么
silicate def───硅酸鹽def
siliqua coin───西力克硬幣
basilisk iga───蛇怪iga
fossiliferous limestone───石灰巖化石
basilisk lizard───蜥蜴
the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.───提高體區摻雜濃度、增加硅膜和硅化物厚度能夠減小增益。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.───其它硅化物層(50.4 - 50.6)處于源極、漏極和多晶硅柵極的頂部。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.───半導體結型二極管包括硅，所述硅與硅化物相接觸時結晶化。
and a spacer on a side of the gate oxide layer pattern, the metal nitride layer pattern, and the silicide.───以及在該柵極氧化層圖案、該金屬氮化層圖案和該硅化物的側面上的間隔物。
The silicide may provide a template for crystallization, decreasing the defect density of the silicon and improving its conductivity.───硅化物可以提供用于結晶化的模板，降低了硅的缺陷密度并且提高了其導電性。
The invention discloses a preparation method of magnesium silicide and a device thereof.───本發明公開了一種硅化鎂的制備方法與裝置。
A suitable inoculant , such as calcium silicide or equivalent, is to be added to the metal stream as the furnace is tapped.───當熔爐運行的時候，可以在金屬溶液里加一種合適的變質劑，例如鈣化劑或者其他的等價物。
The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.───一種微波氫等離子體制備金屬硅化物薄膜的方法，用于薄膜制備領域。
We have a production line of organic chloride, silicide, nitride compounds and etc.
A suitable inoculant , such as calcium silicide or equivalent, is to be added to the metal stream as the furnace is tapped.
In the first section, the improvement of nickel silicide on the junction diode was demonstrated.
An advanced niobium - silicide based ultrahigh temperature alloy was prepared by vacuum consumable arc - melting method.
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
The application of titanium silicide in integrated circuits was emphatically introduced.
In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of Cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
The silicide coatings obtained in the fluidized - bed are similar to those prepared by other methods.
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.