青年中文青年中文

pecvd的意思

pecvd中文翻譯:

abbr.等離子體增強化學汽相沉積(PlasmaEnhancedChemicalVaporDeposition)

相似詞語短語

insectivora species───食蟲綱

pebbly jack───卵石杰克

bat fowling shakespeare definition───捕蝙蝠莎士比亞的定義

pied piper───n.穿花衣的吹笛手,善開空頭支票的領導者;n.穿花衣的吹笛手;善開空頭支票的領導者

optical telescope───[光]光學望遠鏡

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a red pen───紅筆

hindustan epaper───印度斯坦艾帕

a fat peach───肥桃

mightily and merely people───強大而純粹的人

雙語使用場景

First of all, plasma physics, PECVD equipment and its process principles are explained.───首先,對電漿物理、PECVD設備及制程原理加以闡述。

of microcrystalline silicon thin films were fabricated by VHF-PECVD at different substrate temperatures (Ts).───采用VHF-PECVD技術制備了不同襯底溫度的微晶硅薄膜樣品。

The electrical and structural properties of microcrystalline silicon thin film and solar cells fabricated by VHF-PECVD were studied.───本文對VHF PECVD制備的本征微晶硅薄膜和電池進行了電學特性和結構特性方面的測試分析研究。

In this dissertation, we changed the PECVD technique parameters, and deposited amorphous, microcrystalline and polymorphous silicon films.───本論文通過改變PECVD工藝條件,制備了非晶、微晶和多形硅三種氫化硅薄膜。

This paper gives an overview of plasma enhanced chemical vapor deposition (PECVD) used in the solar industry.───本文針對電漿輔助化學氣相沉積在太陽能產業上的應用作一概略性的介紹。

Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD).───非晶硅是存放在低溫等離子體增強化學氣相沉積(等離子體增強化學氣相沉積)。

Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.───等離子體化學氣相沉積技術制備氫化硅薄膜工藝條件成熟穩定而成為薄膜制備的首選方法。

Experimental study of breakdown characteristic of thin dielectric film in nanometre range formed by low temperature PECVD───PECVD法低溫形成納米級薄介質膜擊穿特性的實驗研究

英語使用場景

A-C:F thin films were prepared by PECVD method under different conditions.

We studied the relationship between the RF power, the chamber pressure and the film stress for deposited the silicon nitride film by Plasma Enhance Chemical Vapor Deposition(PECVD).

A double-deck plasma enhanced chemical vapor deposition (PECVD) facility was used to prepare silicon nitride film on the finely polished (100) plane ofp-type single crystal silicon wafer.

The glass composite thin films were deposited on silicon substrates by plasma enhanced chemical vapor deposition method (PECVD).