plasma source的意思

plasma source中文翻譯：

等離子源

相似詞語短語

plasma───n.[等離子]等離子體；血漿；[礦物]深綠玉髓

source───n.(Source)人名；(法)蘇爾斯；n.來源；水源；原始資料

plasma membrane───質膜；漿膜（等于cellmembrane）

donating plasma───捐獻血漿

plasma cells───[醫] 漿細胞；n.[組織][細胞]漿細胞；原生質細胞

cold plasma───[等離子]冷等離子體

plasma cell───n.[組織][細胞]漿細胞；原生質細胞

plasma proteins───血漿蛋白質

write source───寫入源

雙語使用場景

In this paper, a glow discharge plasma source ion implantation technique is described.───本文敘述了輝光放電等離子體源的等離子體源離子注入。

design method for space plasma source and measurement system is introduced in this paper.───文章介紹了空間等離子體源與測試系統的設計方法。

A new large area microwave plasma source has been developed.───研制了一種新的大面積微波等離子體源。

In plasma source ion implantation process, the sheath evolution has a very important influence on the surface modification of materials.───在這一技術中，等離子體鞘層的時空演化對材料表面改性有著非常重要的影響。

This method would be very helpful to the design of practical plasma source ion implantation processes.───這一分析方法對實際等離子體源離子注入應用具有重要的指導作用。

The lab-built plasma polishing setup consists of a vacuum chamber, a plasma source, a RF power supply and gas paths.───設計和安裝了一套等離子體加工試驗平臺。加工試驗平臺由真空系統、等離子體源、射頻電源系統、氣路系統組成。

The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.───利用微波ECR等離子體增強磁控濺射沉積技術在玻璃表面制備了矽膜。

The results show that the ECR plasma source may generate stable, high density plasma with low electron temperature.───實驗證明，ECR等離子體源能夠穩定地產生電子溫度較低的高密度等離子體。

It was studied that metallic material surface was modified by use of the new technique for ion injection with plasma source.───研究了一項實現金屬材料表面改性，采用等離子體源離子注入的新技術。

英語使用場景

Its 300-mm Primo D-RIE system leverages a twin-station, mini-batch cluster architecture with a single-wafer environment and a VHF de-coupled RIE plasma source.

The hollow cathode will be presented as a plasma source for reactive evaporation processes.

It is justified first time by experiments that the magnetic filtering duct influences the cathode vacuum arc discharge by working as second anode of the MEVVA plasma source.

The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.

A microwave three probe system has been used to study the changes of annular waveguide plasma source impedance with operational parameters.