photoresist的意思

photoresist中文翻譯：

n.[電子]光刻膠；[印刷]光致抗蝕劑；[光]光阻材料

相似詞語短語

a photo───一張照片

photo ops───拍照機會（=photoopportunities，多指拍攝政治人物、名人或盛大場面的機會）

canvasback flying photos───瀏覽飛行照片

print photos───打印照片

photo studio───照像館；[攝]照相館；攝像工作室

holiday photos───度假時所照的相片

aviva photo───開始拍照

razorbill photo───剃須刀照片

photo free───無照片

photo ps───照片ps

雙語使用場景

This paper researches the influence of resin and wetting agent for the property of photoresist.───本論文研究了光阻劑中分別增加環氧樹脂和潤濕劑對其性能的影響。

Exposure dose should be changed with the thickness of SU-8 photoresist.───SU - 8膠的厚度確定曝光劑量的大小。

hole in an oxide opaque region of a mask or reticle or in a photoresist layer.───氧化物、掩模或標線的不透明區域，或光刻層中不需要的小孔。

When using the sputtering nickel system, photoresist and nickel Crosslinking became extremely easy-to-be strong enough to produce water.───在擱置濺射鍍鎳的編制洋，平刻膠與鎳交聯后變得格外堅硬，極易爆發水紋。

Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.───在紫外光照射穿透的地方，光刻膠的化學特性會被削弱，使硅晶片表面留下圖案。

Here are a few solutions: firstly, plasma kinetic dedust, in a high vacuum conditions, oxygen ions and photoresist or chemical reaction.───這邊有幾個處置方案：第一，等離子不興塵法，在一個矮真空境況下，氧離子與平刻膠或化學精神反響。

A small undesired hole in an oxide, opaque region of a mask or reticle, or in a photoresist layer.───氧化物、掩模或標線的不透明區域，或光刻層中不需要的小孔。

Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.───同現有的犧牲層材料相比，光致抗蝕劑作犧牲層材料具有一些優越性。

Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.───本發明的涂料組合物可用作光致抗蝕劑的覆蓋涂層，包括可用在浸漬平版印刷工藝中。

英語使用場景

Therefore, organic pigment must to be fine and symmetrical in the photoresist.

An optimized UV-LIGA technique, based on SU-8 photoresist process, was successfully applied to manufacture the thick nickel hexagonal micromesh sieve-sheets with high open area.

No back plate growing method is to electroform metal microstructure on the metal substrate directly by low-cost UV-LIGA technology based on SU-8 photoresist.

According to the analysis of the photoresist process that got organic initiator conditions, nanometer of physical map was obtained.

The flow boards with micro channels were fabricated by photomask alignment and exposure system associated with photoresist coating technique.

The mathematics model that showed photoresist spin coating thickness evolvement on spherical surface was put forward.

First, holographic interference using a He-Cd (325nm) laser was used to create periodic line structure on an i-line sub-micron positive photoresist film.

Main factors of influencing photoresist thickness for dip coating is analysed in this paper. The thickness of photoresist is determined by it.

On the basis of Nickel mould plate fabricated by melting photoresist and electroforming PMMA cylindrical microlens arrays are fabricated by the replication technology of static casting plastic.