青年中文青年中文

phototransistor的意思

phototransistor中文翻譯:

n.[電子]光電晶體管

相似詞語短語
雙語使用場景

Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.───這種結構還可以構成橫向光晶體管,共發射極電流增益為2 ~ 4倍。

Optocoupler, Phototransistor Output, With Base Connection.───光耦,光電晶體管輸出,基地連接。

The phototransistor was installed through holes in the top of the case, and enclosed in a brass tube that was painted black inside and out.───該光敏三極管是通過安裝在洞上方的情況下,密封在一個黃銅管,這是手繪的黑色內。

The phototransistor and the light emitting diode are arranged on the end cover along a radical direction to form a measurement head.───光敏三極管與發光二極管沿徑向安裝于端蓋上形成測量頭。

Blank detail specification; optocoupler with phototransistor output, providing protection against electrical shock───空白詳細規范能提供防電擊保護的帶有光電晶體管輸出的光耦合器

Industry: Phototransistor; Variable Resistors; Other Resistors; Other transistor; Mica capacitor;───經營范圍:貼片;電容;電阻;二三極管;;

Blank detail specification: Ambient rated photocouplers with phototransistor output───空白詳細規范:帶有光電晶體管輸出的額定環境光電耦合器

Reseeach and Fabrication of Phototransistor for DNA Analysis───DNA檢測用光電管的研制

英語使用場景

Phototransistor. Collector-emitter voltage 30 V. Emitter-collector voltage 6 V. Collector current 20 mA. Power dissipation 100 mW.

We find that the conventional phototransistor has a good responsivity but lower speed performance.

Note that both the l.e.d. and phototransistor are very directional - the tops are the sensitive surfaces.

The phototransistor was installed through holes in the top of the case, and enclosed in a brass tube that was painted black inside and out.

Optocoupler, Phototransistor Output, With Base Connection.

Phototransistor. Collector emitter voltage 30 V. Emitter collector voltage 5 V. Power dissipation 75 mW.

The phototransistor and the light emitting diode are arranged on the end cover along a radical direction to form a measurement head.

The conventional phototransistor and photodiode are discussed first.

The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.