silicon wafer的意思

silicon wafer中文翻譯：

[電子]硅片

相似詞語短語

wafer───n.(Wafer)人名；(英)韋弗；n.圓片，晶片；薄片，干膠片；薄餅；圣餅；vt.用干膠片封

silicon───n.[化學]硅；硅元素

silicon dioxide───[無化]二氧化硅；n.二氧化硅

wafer mapping───[電子]晶片圖；晶片圖形布置

dummy wafer───假片

wafer notch───晶圓缺口

sapphire wafer───藍寶石晶片

silicon valley───硅谷（美國一高科技區名）

wafer no───晶圓編號

雙語使用場景

disruption in silicon wafer production can then stall makers of memory chips and, ultimately, consumer products.───硅晶片生產的中斷會使內存芯片的生產停頓，并最終會影響到消費產品。

The new device is a silicon wafer about the shape and size of a playing card.───這個新設備是一張紙牌大小的硅晶片。

Making integrated circuits involves depositing layers of materials such as semiconductors and metals on a silicon wafer.───制造集成電路需要將如半導體和金屬等多層材料放置在硅片上。

I went into a clean room with a fresh silicon wafer, and then I just cranked away at all the big machines for about 100 hours.───我在無菌室操作一片硅晶片，接著我周轉于所有這些大型機器中大約100個小時。

Chip: The individual circuit or component of a silicon wafer, the leadless form of an electronic component.───芯片：單回路或元件的硅晶元，無引腳的電子元件。

Contamination Particulate - Particles found on the surface of a silicon wafer.───沾污顆粒-晶圓片表面上的顆粒。

The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.───研究金剛石砂輪磨削單晶硅片時的表面磨削溫度。

The differential microphone is formed using silicon fabrication techniques applied only to a single, front face of a silicon wafer.───該差動式傳聲器是通過將硅制造技術僅應用到硅片的一個單獨的前面上而形成的。

The final Ic is made by sequentially transferring the features from each mask, level by level, to the surface of the silicon wafer.───按照順序從每一塊掩膜版上將圖形一層一層地轉移到硅片的表面，就制得了成品集成電路。

英語使用場景

A silicon wafer bonding technology and its application to new dielectric isolation combined with conventional V-shaped grooves are described.

The microscope comprises a silicon wafer filter membrane which is highly- planar and does not fluoresce.

Mechanical Test Wafer - A silicon wafer used for testing purposes.

Hot plate with silicon wafer in initial configuration ( before heating ).

Li is China's largest electronic silicon and silicon wafer manufacturing company.

In this work, RAFT grafting polymerizations from silicon wafer were investigated.

This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.

Hot plate with silicon wafer lowered to heating position.

In the thesis, the fabrication processes is compatible with SOI and ordinary silicon wafer, dielectric mirror and metal mirror.